Journals:
Conference Proceedings:
Invited Talks:
T9. American Physical Society March Meeting 2016, Baltimore, MD, (2016)

T8. University of Minnesota First Annual 2D Materials Summer School, (2016)

T7. 46th IEEE Semiconductor Interface Specialists Conference, Arlington, VA, (2015)

T6. SPIE Optics + Photonics meeting, San Diego, CA, (2015)

T5. CNST Nanotechnology Workshop, Urbana, IL, (2015)

T4. 5th Graphene and 2D Materials Satellite Symposium, Los Angeles, CA, 2014

T3. Nano GW 2014 Workshop, Washington, DC, 2014

T2. Connecticut Microelectronics and Optoelectronics Symposium, (2013)

T1. 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, P.R. China, (2010)
2D Materials and Nano Device Group


UNIVERSITY OF ILLINOIS AT URBANA-CHAMPAIGN
I L L I N O I S
J32. Z. Yang, R. Grassi, M. Freitag, Y-H. Lee, T. Low, and W. Zhu, "Spatial/temporal photocurrent and electronic transport in monolayer molybdenum disulfide grown by chemical vapor deposition", Applied Physics Letters Vol. 108, Article number: 083104, (2016)

J31. S-C. Lu, M. Mohamed, and W. Zhu, ¡°Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals¡±, 2D Materials, Vol.3, Article number: 011010, (2016)

J30. M. Mehboudi, A. M. Dorio, W. Zhu, A. van der Zande, H. O. Churchill, A. A. Pacheco-Sanjuan, E. O. Harriss, P. Kumar, and S. Barraza-Lopez, ¡°Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers¡±, Nano Letters, Vol. 16, pp 1704-1712, (2016)

J29. Wenjuan Zhu, Tony Low, Yi-Hsien Lee, Han Wang, Damon B. Farmer, Jing Kong, Fengnian Xia and Phaedon Avouris, "Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition", Nature Communications, Vol. 5, Article number: 3087, (2014)

J28. Marcus Freitag, Tony Low, Luis Martin-Moreno, Wenjuan Zhu, Francisco Guinea and Phaedon Avouris, "Substrate-Sensitive Mid-infrared Photoresponse in Graphene", ACS Nano, Vol. 8, pp 8350-8356, (2014)

J27. Yilei Li, Hugen Yan, Damon B Farmer, Xiang Meng, Wenjuan Zhu, Richard M Osgood, Tony F Heinz, Phaedon Avouris, "Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers", Nano Letters, Vol.14, pp 1573-1577, (2014)

J26. Hugen Yan, Tony Low, Wenjuan Zhu, Yanqing Wu, Marcus Freitag, Xuesong Li, Francisco Guinea, Phaedon Avouris and Fengnian Xia, "Damping pathways of mid-infrared plasmons in graphene nanostructures", Nature Photonics, 7, pp.394-399, (2013)

J25. Wenjuan Zhu, Tony Low, Damon B. Farmer, Keith Jenkins, Bruce Ek, and Phaedon Avouris, "Effect of dual gate control on the alternating current performance of graphene radio frequency device", J. Appl. Phys. 114, 044307 (2013)

J24. Marcus Freitag, Tony Low, Wenjuan Zhu, Hugen Yan, Fengnian Xia, Phaedon Avouris, "Photocurrent in graphene harnessed by tunable intrinsic plasmons", Nature Communications, Vol. 4, Article number:1951, (2013).

J23. Wenjuan Zhu, Damon Farmer, Keith Jenkins, Bruce Ek, Satoshi Oida, Xuesong Li, Jim Bucchignano, Simon Dawes, Elizabeth A. Duch, and Phaedon Avouris, "Graphene radio frequency devices on flexible substrate", Appl. Phys. Lett. Vol. 102, 233102 (2013)

J22. Wenjuan Zhu, Tony Low, Vasili Perebeinos, Ageeth A. Bol, Yu Zhu, Hugen Yan, Jerry Tersoff, Phaedon Avouris, "Structure and electronic transport in graphene wrinkles", Nano Letters, Vol. 12, pp 3431-3436, (2012)

J21. Hugen Yan, Xuesong Li, Bhupesh Chandra, George Tulevski, Yanqing Wu, Marcus Freitag, Wenjuan Zhu, Phaedon Avouris, Fengnian Xia , "Tunable infrared plasmonic devices using graphene/insulator stacks", Nature Nanotechnology 7, 330-334 (2012)

J20. Yanqing Wu, Damon B Farmer, Wenjuan Zhu, Shu-Jen Han, Christos D Dimitrakopoulos, Ageeth A Bol, Phaedon Avouris, Yu-Ming Lin, "Three-terminal graphene negative differential resistance devices", ACS Nano, 6, pp 2610-2616, (2012)

J19. Hugen Yan, Zhiqiang Li, Xuesong Li, Wenjuan Zhu, Phaedon Avouris, Fengnian Xia, "Infrared spectroscopy of tunable dirac terahertz magneto-plasmons in graphene", Nano Letters, 12, pp 3766-3771, (2012)

J18. Ching-Tzu Chen, Tony Low, Hsin-Ying Chiu and Wenjuan Zhu, "Graphene-Side-Gate Engineering", IEEE Electron Device Letters, Vol. 33, No.3, pp. 330, (2012)

J17. Yanqing Wu, Keith A Jenkins, Alberto Valdes-Garcia, Damon B Farmer, Yu Zhu, Ageeth A Bol, Christos Dimitrakopoulos, Wenjuan Zhu, Fengnian Xia, Phaedon Avouris, Yu-Ming Lin, "State-of-the-art graphene high-frequency electronics", Nano Letters, 12, pp 3062-3067, (2012)

J16. Wenjuan Zhu, C. Dimitrakopoulos, M. Freitag and Ph. Avouris, "Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC", IEEE Transactions of nanotechnology, Vol. 10, No. 5, pp.1196, (2011).

J15. Hugen Yan, Fengnian Xia, Wenjuan Zhu, Marcus Freitag, Christos Dimitrakopoulos, Ageeth A. Bol, George Tulevski, and Phaedon Avouris, "Infrared Spectroscopy of Wafer-Scale Graphene", ACS Nano, Vol. 5, No.12, pp 9854, (2011)

J14. Wenjuan Zhu, D. Neumayer, V. Perebeinos, and Ph. Avouris, "Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers", Nano Letters, Vol. 10, pp. 3572, (2010).

J13. Y. Lin, C. Dimitrakopoulos, D. B. Farmer, S-J. Han, Y. Wu, Wenjuan Zhu, D. K. Gaskill, J. L. Tedesco, R.L. Myers-Ward, C.R. Eddy, Jr., Alfred Grill, and Ph. Avouris, "Multicarrier transport in epitaxial multilayer graphene", Applied Physics Letters, Vol. 97, 112107, (2010).

J12. Wenjuan Zhu, V. Perebeinos, M. Freitag and Ph. Avouris, "Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene", Physics Review B, Vol. 80, 235402, (2009)

 J11. W. J. Zhu and T.P. Ma, "Temperature dependence of channel mobility in HfO2-gated NMOSFETs", IEEE Electron Device Letters, Vol. 25, No. 2, pp. 89- 91, (2004).

J10. W.J. Zhu, J.P. Han, and T.P. Ma, "Mobility Measurement and Degradation Mechanisms of MOSFETs MadeWith Ultrathin High-k Dielectrics", IEEE Transactions on Electron Devices, Vol. 51, No.1, pp.98- 105, (2004).

J9. Y. Yang, W. J. Zhu, T.P Ma and S. Stemmer, "High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics", Journal of Applied Physics, Vol. 95, No.7, pp.3772-3777, (2004)

J8. S. Stemmer, Z.Q. Chen, W. J. Zhu and T. P. Ma, "Electron Energy-loss Spectroscopy Study of Thin Film Hafnium Aluminates for Novel Gate Dielectrics", Journal of Microscopy, Vol. 210, Issue 1, pp.74-79, (2003)

J7. W.J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa and T.P. Ma, "Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics", IEEE Electron Device Letters, Vol. 23, No.11, pp. 649- 651, (2002).

J6. W.J. Zhu, S. Zafar, T. Tamagawa, and T.P. Ma, "Charge trapping in ultra-thin hafnium oxide", IEEE Electron Device Letters, Vol. 23, No.10, pp.597-599, (2002).

J5. W.J. Zhu, T.P. Ma, T. Tamagawa, J. Kim and Y.Di, "Current Transport in Metal/Hafnium Oxide/Silicon Structure", IEEE Electron Device Letters, Vol. 23, No.2, pp.97-99, (2002).

J4. Min She Tsu-Jae King Chenming Hu Wenjuan Zhu, Zhijiong Luo Jin-Ping Han Tso-Ping Ma, "JVD silicon nitride as tunnel dielectric in p-channel flash memory", IEEE Electron Device Letters, Vol. 23, Issue: 2, pp. 91-93, (2002)

J3. C.M. Osburn, I. Kim, S.K. Han, I. De, K.F. Yee, S. Gannavaram, S.J. Lee, C.-H. Lee, Z.J. Luo, W. Zhu, J.R. Hauser, D.-L, Kwong, G. Lucovsky, T.P. Ma, M.C. Ozturk, "Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?", IBM Journal of Research and Development, Vol. 46, No. 2/3, pp. 299-315, (2002)

J2. W.J. Zhu, X.W. Wang, T.P. Ma, Jesse B. Tucker and Mulpuri V. Rao, "Highly Durable SiC nMISFET's at 450oC", Materials Science Forum, Vols. 338-342, pp.1311-1314, (1999).

J1. Li Xiangyang, Zhao Jianhua, Zhu Wenjuan, Hu Xierong, "The Impulse Coupling of Interaction between Gradate and Intensive Pulsed Laser", Infrared and Laser Engineering, Vol. 26, No. 4, (1997)
C23. W. C. Yap and W. J. Zhu, "Novel Two-dimensional GeSe-MoS2 PN Heterojunctions", 47th IEEE Semiconductor Interface Specialists Conference, 2016.

C22. J. Liu, and W. J. Zhu, "Characterization of Interface States in Black Phosphorus Capacitors with Boron Nitride Gate Dielectrics", 47th IEEE Semiconductor Interface Specialists Conference, 2016.

C21. W.J. Zhu, T. P. Ma, T. Tamagawa, Y.Di, J. Kim, R. Carruthers, M.Gibson and T. Furukawa, “HfO2 and HfAlO for CMOS: Thermal Stability and Current Transport”, IEEE International Electron Device Meeting (IEDM), Technical Digest, Section 20-4, pp. 463-466, (2001)
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C20. W.J. Zhu, T. Tamagawa, W.Y. Wang, and T.P. Ma, “Mobility Extraction for MOSFETs Made with Ultra-thin High-k Dielectrics: Correct Accounting of Channel Carriers”, IEEE 33th Semiconductor Interface Specialists Conference (SISC), Sec. 7.2, (2002) (IEEE SISC Ed Nicollican Award for Best Student Paper).

C19. Y.Q. Wu, D. B. Farmer, W. J. Zhu, A. Valdes-Garcia, K.A. Jenkins, C. Dimitrakopoulos, Ph. Avouris and Y.-M. Lin, “Record High RF Performance for Epitaxial Graphene Transistors”, IEEE International Electron Device Meeting (IEDM), Technical Digest, pp. 23.8.1 - 23.8.3, (2011).

C18. W.J. Zhu, M. Khare, J. Snare, P.R. Varekamp, S.H. Ku, P. Agnello, T.C. Chen and T.P. Ma, "Capacitance Measurement of Ultra-thin Gate Dielectrics under Inversion Condition", International Symposium on VLSI Technologies, Systems and Applications, (2001).

C17. W.J. Zhu, J.Shepard, W. He, A. Ray, P. Ronsheim, D. Schepis, D. Mocuta, E. Leobandung, "High performance and highly stable ultra-thin oxynitride for CMOS applications",The 9th International Conference on Solid-State and Integrated-Circuit Technology, A6.5, (2008).

C16. X.W. Wang, W.J. Zhu and T.P. Ma, “High Temperature Reliable nMOSFETs on p-type 6H-SiC”, IEEE International Electron Device Meeting (IEDM), Technical Digest, pp. 209-212, (1999).

C15. P. Jamison, M. Copel, M. Chudzik, M.M. Frank, B.P.Linder, R.Jammy, W.J. Zhu, “A comparison of electrical and physical properties of MOCVD hafnium silicate thin films deposited using various silicon precursors”, Materials Research Society Symposium Proceedings, v 917, Gate Stack Scaling: Materials Selection, Role of Interfaces, and Reliability Implications, p 95-99, (2006).

C14. D.-G. Park, Z.J. Luo, N. Edleman, W.J. Zhu, P. Nguyen, K. Wong, C. Cabral1, P. Jamison1, B.H. Lee, A. Chou, M. Chudzik, J. Bruley, O. Gluschenkov, P. Ronsheim, A. Chakravarti, R. Mitchell, V. Ku, H. Kim1, E. Duch1, P. Kozlowski1, C.D’Emic1, V. Narayanan1, A. Steegen, R. Wise, R. Jammy1, R. Rengarajan, H. Ng, A. Sekiguchi, and C.H. Wann, “Thermally robust dual-work function ALD-MNx MOSFETs using conventional CMOS process flow”, 2004 Symposium on VLSI Technology, Digest of Technical Papers, pp.186-187, (2004).

C13. N. V. Nguyen, J.-P. Han, and J.Y. Kim, W.J. Zhu, Z. Luo, and T. P. Ma, "Optical properties of jet-vapor-deposited TiAlO and HfAlO determined by vacuum ultraviolet spectroscopic ellipsometry", Characterization and Metrology for ULSI Technology, 2003 International Conference, pp.181-185, (2003).
C12. S. Stemmer, Y. Yang, Y. Li, B Foran, P.S. Lysaght, J.A. Gisby, J.R. Taylor, S.K. Streiffer, P. Fuoss, S. Seifert, W.J. Zhu, and T.P. Ma, "Structure and stability of alternative gate dielectrics for Si CMOS”, 2003 International Semiconductor Device Research Symposium, pp.60- 61, (2003).

C11. C.M. Osburn, S.K. Han, I. Kim, S.A. Campbell, E. Garfunkel, T. Gustafson, J. Hauser, T.-J. King, Q. Liu, P. Ranade, A. Kingon, D.-L. Kwong, S.J. Lee, C.H. Lee, K. Onishi, C.S. Kang, R. Choi, H. Cho, R. Nich, G. Lucovsky, J.G. Hong, T.P. Ma, W.J. Zhu, Z. Luo, J.P. Maria, D. Wicaksana, V. Misra, J.J. Lee, Y.S. Suh, G. Parksons, D. Niu, and S. Stemmer, “Integration Issues with high-k Gate Stacks”, The Electrochemical Society PV 2003-06, ULSI Process Integration III, p.375, (2003).

C10. E. Leobandung, H. Nayakama, D.Mocuta, … W.J. Zhu, et. al, “High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell”, Symposium on VLSI Technology, Symposium on VLSI Technology, Digest of Technical Papers, p 126-127, (2005).

C9. W.J. Zhu, T.P. Ma, T. Tamagawa, Y. Di, M. Gibson, J. Kim, R. Carruthers and T. Furukawa, “Thermal Stability of Hafnium Oxide and Hafnium Aluminum Oxide”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section 1, paper 02, (2002).

C8. W.J. Zhu, T. Tamagawa, Y. Di and T.P. Ma, “Thermal Stability of Hafnium Oxide and Hafnium Aluminum Oxide”, IEEE 32th Semiconductor Interface Specialists Conference (SISC), Sec. 6.2, (2001).

C7. W.J. Zhu, T. Tamagawa, J. Kim, C. Broadbridge, T.P. Ma, “Characteristics of Ultra-thin Hafnium Oxide Gate Dielectrics”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section 3, paper 02, (2001).

C6. C. Caragianis-Broadbridge, J.-P. Han, T.P. Ma, A.H. Lehman, W.J. Zhu, Z. Luo, D.L. Pechkis, B.L. Laube; “Microstructure and Physical Characterization of Ferroelectric-gate Memory Capacitors with Various Buffer Layers”, Transport and Microstructural Phenomena in Oxide Electronics, Material Research Society, San Francisco, Vol. 666, (2001).

C5. C. Caragianis-Broadbridge, D.L. Pechkis and E. Anderson, J.-P. Han, W.J. Zhu, Z. Luo, T.P. Ma, A. Hein Lehman and K.L. Klein, and B.L. Laube, “Microstructural and Physical Properties of Thin Film Dielectrics on Silicon Substrates”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section, P4, (2001).
C4. W.J. Zhu, T. Tamagawa, B. Halpern, X.W. Wang, and T.P. Ma, “Electrical Properties of Ultra-thin Hafnium Oxide Gate Dielectrics”, IEEE 31th Semiconductor Interface Specialists Conference (SISC), Sec. 1.2, (2000).
C3. C. Caragianis-Broadbridge, J. R. Miecznikowski, W.J. Zhu, Z. Luo, J. Han, and A. Hein Lehman, “Microstructure and Electronic Properties of Thin Film Nanoporus Silica as a Function of Processing and Annealing Methods”, Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, Material Research Society, San Francisco, Vol. 398, (2000).

C2. W.J. Zhu, X.W. Wang, and T.P. Ma, “Temperature Dependence of Channel Electron Mobility in 6H-SiC NMISFETs”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), (2000).

C1. W.J. Zhu, X.W. Wang, and T.P. Ma, “Temperature dependence of channel Electron Mobility in 6H-SiC nMOSFETs”, IEEE 30th Semiconductor Interface Specialists Conference (SISC), Sec. 3.1, (1999).
Zhu Group
P24. Zihan Yao, Sunphil Kim, Arend? van der Zande, and Wenjuan Zhu, "Molybdenum disulfide grown by gas-phase precursor hydrogen sulfide in MOCVD", APS March Meeting, 2017

P23. Jialun Liu and Wenjuan Zhu, "Characterization of Interface States in Black Phosphorus Capacitors with Various Gate Dielectrics", APS March Meeting, 2017

P22. Wui Chung Yap, Hao Jiang, Qiangfei Xia, and Wenjuan Zhu, "Ferroelectric memory based on molybdenum disulfide and ferroelectric hafnium oxide", APS March Meeting, 2017

P21. Z. Yang, R. Grassi, M. Freitag, Y-H. Lee, T. Low, and W.J. Zhu, “Electronic Transport and Spatial/Temporal Photocurrent in Monolayer Molybdenum Disulfide Grown by CVD”, APS March Meeting, Session G1, Abstract 346, (2016).

P20. V. Wei, S.-C. Lu, and W.J. Zhu, “Large Scale Monolayer MoS2 Grown by Chemical Vapor Deposition”, CNST 14th Annual Nanotechnology Workshop, (2016).

P19. Z. Yang, M.-H. Chuang, Y.-H. Lee, and W.J. Zhu, “Electronic Transport and Optical Properties of Two-Dimensional (2D) MoS2-WS2 Heterostructures” CNST 14th Annual Nanotechnology Workshop, (2016).

P18. Weijun Luo, Rui Yang, Jialun Liu, Wenjuan Zhu, Guangrui (Maggie) Xia, “Thermal Sublimation as a Scalable and Controllable Thinning Method for the Fabrication of Few-Layer Black Phosphorus”, Materials Research Society 2016 Fall Meeting, Boston, MA, USA, Nov. 27 – Dec. 2, (2016)

P17. S. Barraza-Lopez, M. Mehboudi, P. Kumar, E. O. Harriss, H. O. H. Churchill, A. M. Dorio, W.J. Zhu, A. van der Zande, A. A. Pacheco SanJuan “Two dimensional disorder in black phosphorus and layered monochalcogenides”, APS March Meeting, Session L16, Abstract 011, (2016).

P16. M. Mehboudi, S. Barraza-Lopez, A. M. Dorio, W.J. Zhu, A. van der Zande, H. O. H. Churchill, A. A. Pacheco-Sanjuan, E. O. Harriss, P. Kumar, “Ground state degeneracy, energy barriers, and molecular dynamics evidence for two-dimensional disorder in black phosphorus and monochalcogenide monolayers at finite temperature”, APS March Meeting, Session P16, Abstract 002, (2016).

P15. W.J. Zhu, D. Farmer, Y. Wu, B. Ek, K. Jenkins, Ph. Avouris, “Effect of back-gate bias on Graphene RF device performance”, APS March Meeting, Volume 58, Number 1, (2013).

P14. H. Yan, T. Low, W.J. Zhu, Y. Wu, F. Guinea, F. Xia, Ph. Avouris, “Optical Properties of Graphene Nanoribbons”, APS March Meeting, Volume 58, Number 1, (2013).

P13. Z. Chen, H. Yan, X. Li, W.J. Zhu, Ph. Avouris, F. Xia, Z. Li, “Tunable magneto-plasmons in graphene: an infrared study”, APS March Meeting, Volume 58, Number 1. (2013).

P12. W.J. Zhu, T. Low, Y. Zhu, A. Bol, H. Yan, X. Li, Y.-M. Lin, Y. Wu, F. Xia, V. Perebeinos, Ph. Avouris, “Physical and electrical properties of graphene folds grown by Chemical Vapor Deposition”, APS March Meeting, Volume 57, Number 1, Session X12, (2012).

P11. W.J. Zhu, T. Low, V. Perebeinos, A. A. Bol, Y. Zhu, H. Yan, J. Tersoff, and Ph. Avouris, “Structure and electronic transport in graphene wrinkles”, Material Research Symposium, (2012).

P10. F. Xia, H. Yan, X. Li, B. Chandra, G. Tulevski, Y. Wu, M. Freitag, W.J. Zhu, Ph. Avouris, “Graphene Plasmonic Terahertz Filters and Polarizers”, APS March Meeting, Volume 57, Number 1, Session P6, (2012).

P9. H. Yan, F. Xia, X. Li, B. Chandra, G. Tulevski, Y. Wu, M. Freitag, W.J. Zhu, Ph. Avouris, “Dirac Plasmas in Graphene”, APS March Meeting, Volume 57, Number 1, Session P6, (2012).

P8. W.J. Zhu, T. Low, V. Perebeinos, A. A. Bol, Y. Zhu, H. Yan, J. Tersoff, and Ph. Avouris, “Graphene wrinkles: Structure and effects on electronic transport”, 4th IBM Semiconductor Technology Symposium, (2012).

P7. W.J. Zhu, D. Neumayer, V. Perebeinos, Ph. Avouris, "PECVD silicon nitride gate dielectrics and band-gap engineering in graphene devices", APS March Meeting, Volume 56, Number 1, (2011).

P6. Y.-M. Lin, C. Dimitrakopoulos, D. Farmer, S.-J. Han, Y. Wu, W.J. Zhu, D. Kurt Gaskill, J. Tedesco, R. Myers-Ward, C. Eddy, Jr., A. Grill, Ph. Avouris, “Carrier Transport in Epitaxial Multi-layer Graphene”, APS March Meeting, Volume 56, Number 1, (2011).

P5. W.J. Zhu, C. Dimitrakopoulos, M. Freitag, Ph. Avouris,"Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC", American Vacuum Society 58th International Symposium & Exhibition, (2011).

P4. C. Dimitrakopoulos, T. J. McArdle, A. Grill, D. Pfeiffer, Y.-M. Lin, D. Farmer, Y. Wu, W.J. Zhu and Ph. Avouris, “Optimization of Wafer-Scale Epitaxial Graphene Growth on SiC for High Frequency Applications” Materials Research Society, Symposium AA, (2011).

P3. C.-T. Chen, T. Low, H.-Y. Chiu and W.J. Zhu, “Engineering Side-Gate Controlled Potential Barrier in Bilayer Graphene”. 2011 Materials Research Society, Symposium AA, (2011).

P2. W.J. Zhu, V. Perebeinos, M. Freitag, Ph. Avouris, “'Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes”, APS March Meeting, Volume 55, Number 2, session J21, (2010).

P1. W.J. Zhu, D. Neumayer, V. Perebeinos, P. Avouris, "CVD Gate Dielectrics and Bandgap Engineering of Graphene Layers", American Vacuum Society 57th International Symposium & Exhibition, (2010).
Conference presentations/posters: